Fabrication of metallic nanowires with a scanning tunneling microscope

Reproducible Fabrication of Scanning Tunneling Microscope Tips

Reproducible fabrication of Scanning Tunneling Microscope tips is carried out following an electrochemical procedure widely reported. Tips are made from 0.5 diameter tungsten wire. Controlling fabrication parameters (immersion in the electrochemical solution, current-voltage ranges, duration of the process, among others) we achieve aspect ratios of 0.68 and tip radii of 330 nm in the best case....

Fabrication of silicon nanostructures with a scanning tunneling microscope

A technique is presented for fabricating Si nanostructures with a scanning tunneling microscope operated in air. The process involves the direct chemical modification of a H-passivated Si( 100) surface and a subsequent liquid etch. The chemically modified portions of the surface can withstand a deep ( > 100 nm) liquid etch of the unmodified regions with no etch degradation of the modified surfa...

Simulating Scanning Tunneling Microscope

Characterization of Metallic Nanowires by Combining Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM)

A new experimental method is introduced in order to characterize the mechanical properties of metallic nanowires. An accurate mechanical characterization of nanowires requires simultaneous imaging using scanning electron microscope (SEM) and mechanical testing with an atomic force microscope (AFM). In this study, an AFM is located inside an SEM chamber in order to establish the visibility of th...

Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs na...